Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

In response to the increasing adoption of GaN devices in the automotive sector, which is expected to accelerate in 2026, ROHM plans to ensure the rapid introduction of automotive-grade GaN devices by ...

Rohm Semiconductor introduced the GNP2070TD-Z, a 650-V enhancement-mode GaN HEMT in a TO-leadless (TOLL) package. With dimensions of 11.68×9.9×2.4 mm, this compact package enhances heat dissipation, ...

Racial disparities in lung transplantation rates in CF suggest that HEMT has benefitted White patients more than Black and Hispanic patients.

Rohm has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package - a packaging technology increasingly being adopted in ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower ...

In connected car news are Honda, Rohm and Geotab. Honda Researchers Develop Atomically Thin Nanoribbons. Scientists at Honda ...

ROHM began mass production of its 1 st generation 650V GaN HEMTs in April 2023, followed by the release of power stage ICs that combine a gate driver and 650V GaN HEMT in a single package.

ROHM has developed 650V GaN HEMTs in the TOLL (TO-LeadLess) package: the GNP2070TD-Z. Featuring a compact design with ...