ST has announce the VIPer11B range of off-line high-voltage converters, which are said to make tiny, efficient, and low-cost ...

Company introduces portfolio of products and reference designs around 30V to 120V bi-directional GaN platform Battery Management Systems (BMS) are the central intelligence of modern energy storage, ...

Wise Integration, a French pioneer in digital control for GaN and GaN IC-based power supplies, has released its first fully ...

New IC is first in a series of isolated gate driver solutions optimised for GaN devices Rohm has developed an isolated gate ...

Navitas Semiconductor, developer of GaNFast GaN and GeneSiC SiC power semiconductors, has been awarded the ‘Outstanding ...

EPC Space has announced a radiation-hardened 300V GaN FET for high-voltage, high-power space applications, including ...

In July 2023, Renesas entered into a SiC wafer supply agreement with Wolfspeed, in which it provided a deposit of $2 billion.

STMicroelectronics’ STGWA30IH160DF2 IGBT combines a breakdown-voltage rating of 1600 V and high thermal performance with ...

The DCM32xx00 series of 2-channel digital isolators is available in the narrow 8-pin SOIC8-N package and offers stable ...

Wolfspeed has entered into a Restructuring Support Agreement (RSA)with key lenders, including holders of more than 97 percent of its senior secured notes; Renesas Electronics' wholly owned US ...

Now researchers from University of Science and Technology of China (USTC) have demonstrated a vertical GaN PiN diode with a reverse blocking voltage (BV) higher than 1.7 kV after high-energy proton ...

Alpha and Omega Semiconductor (AOS) has introduced its AONK40202 25V MOSFET in DFN3.3x3.3 Source-Down packaging technology.