Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

GaN fabrication typically uses substrates like silicon and sapphire to support growth. But the process can create misalignments in the crystal structures – referred to as dislocation defects ...

Delmic and Digital Surf are proud to bring to market new CL Workspace software powered by Mountains® technology, an ...

Materials are known to interact with electromagnetic fields in different ways, which reflect their structures and underlying ...

Gallium oxide wafers are easier to produce versus GaN (Gallium Nitride) and SiC (silicon Carbide ... MIG is building China’s first integral production line, combining crystal growth, processing, and ...

From Kathmandu and Jaipur to Tokyo and Macau, here are the best times to travel to the best destinations by month in 2025.

The team, led by Professor Huang Bing and his team at Peking University, identifies the leading cause of defects in GaN crystal growth. GaN fabrication typically uses substrates like silicon and ...

According to Diamfab’s Chicot, one of the key advantages to synthetic diamond materials is its ability to withstand very high ...

China’s top diplomat didn’t name the United States directly when warning against the return of the “law of the jungle” at a ...