The new bismuth-based transistor could revolutionize chip design, offering higher efficiency while bypassing silicon’s limitations.

A team of researchers at Peking University claims to have shattered chip performance limits and proven that China can use new materials to “change lanes” in the semiconductor race by ...

Cambridge GaN Devices has patented a technique for lowering losses in 100kW+ IGBT-based vehicle traction drives, at lower cost than all-silicon-carbide inverters, it said. It involves connecting GaN ...

March 11 marks the annual celebration of all things 311, and the band is marking the occasion this year with a whole bunch of news. First, the “Down” rockers have announced a vinyl reissue of their ...