A research team, led by Professor Jimin Kwon from the Department of Electrical Engineering at UNIST, in collaboration with ...
Current research led by TU Chemnitz contributes to a deeper understanding of why slow electrons reduce the efficiency of ...
A new photodetector design combines metal-organic frameworks and MXene materials to overcome silicons performance limits, ...
Achieving integration of semiconducting and superconducting qubits with full industrial 300-mm wafer fabrication.
Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.
Surface engineering is transforming battery technology. From nano-patterned electrodes to protective coatings and dendrite ...
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
How much does it cost TSMC to start up its new chip-manufacturing plants on US soil? According to a new study by TechInsights ...
Silicon Wafers for Nanoparticle Research SOUTH BOSTON, MA, UNITED STATES, March 27, 2025 /EINPresswire / -- As gl ...
2d
Tech Xplore on MSNDNA scaffolds enable self-assembling 3D electronic devicesResearchers at Columbia Engineering have for the first time used DNA to help create 3D electronically operational devices ...
Wolfspeed, Inc.’s WOLF share price has dipped by 42.94%, which has investors questioning if this is right time to buy.
Abstract Atomically thin two-dimensional semiconductor molybdenum disulfide (MoS2) is considered an ideal n-type channel material for field-effect ...
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