A research team, led by Professor Jimin Kwon from the Department of Electrical Engineering at UNIST, in collaboration with ...
Current research led by TU Chemnitz contributes to a deeper understanding of why slow electrons reduce the efficiency of ...
A new photodetector design combines metal-organic frameworks and MXene materials to overcome silicons performance limits, ...
Achieving integration of semiconducting and superconducting qubits with full industrial 300-mm wafer fabrication.
Researchers demonstrate scalable integration of graphene and GaN devices using van der Waals forces, enabling high-performance CMOS-compatible electronics.
Surface engineering is transforming battery technology. From nano-patterned electrodes to protective coatings and dendrite ...
Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...
How much does it cost TSMC to start up its new chip-manufacturing plants on US soil? According to a new study by TechInsights ...
Silicon Wafers for Nanoparticle Research SOUTH BOSTON, MA, UNITED STATES, March 27, 2025 /EINPresswire / -- As gl ...
Researchers at Columbia Engineering have for the first time used DNA to help create 3D electronically operational devices ...
Wolfspeed, Inc.’s WOLF share price has dipped by 42.94%, which has investors questioning if this is right time to buy.
Abstract Atomically thin two-dimensional semiconductor molybdenum disulfide (MoS2) is considered an ideal n-type channel material for field-effect ...