Gallium's captured the imagination since China restricted exports, but what is it and which ASX companies are in line to ...

The new portfolio of 1200V SiCPAK™ power modules, enabled by advanced epoxy-resin potting technology, are engineered to withstand high-humidity environments by preventing moisture ingression and ...

TagoreTech Inc., a US innovator in radio frequency solutions, targets a threefold revenue increase in four years. Through ...

Partnership strengthens the domestic supply chain of Polar Semiconductor, and enhances access of this dual-use technology to ...

Navitas high-power GaNSafe 4 th generation family integrates control, drive, sensing, and critical protection features that ...

A new class of semiconductors that can store information in electric fields could enable computers that run on less power, ...

Chhattisgarh Chief Minister Vishnu Deo Sai on Friday (11 April) laid the foundation stone for state’s first Gallium Nitride (GaN)-based semiconductor fabrication facility in New Raipur. Aiming to ...

IQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution. The U.K. semiconductor company on Thursday said that the ...

Polar received up to $123 million through the CHIPS and Science Act to double its U.S. production capacity of sensor and power chips. This direct funding was part of more than $525 million from ...

STMicroelectronics and Innoscience have signed a joint development agreement (JDA) to develop and manufacture gallium nitride on silicon (GaN-on-Si).

A world-first N-polar GaN wafer created by Chinese scientists could be a game changer for the semiconductor industry.