Infineon Technologies AG has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky ...

Infineon Technologies AG has introduced what it claims is the world’s first gallium nitride (GaN) power transistor with an integrated Schottky diode.

TagoreTech Inc., a US innovator in radio frequency solutions, targets a threefold revenue increase in four years. Through ...

Chhattisgarh Chief Minister Vishnu Deo Sai on Friday (11 April) laid the foundation stone for state’s first Gallium Nitride (GaN)-based semiconductor fabrication facility in New Raipur. Aiming to ...

Chhattisgarh launches India’s first Gallium Nitride (GaN) semiconductor unit, aiming to become a tech powerhouse. With a Rs 1 ...

Beijing's push to dominate third-generation semiconductor technology is taking shape along divergent paths, with silicon ...

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...

IQE said it signed a joint development agreement with X-FAB to create a European-based gallium nitride power device platform solution. The U.K. semiconductor company on Thursday said that the ...

Gallium Nitride (GaN) is next-generation semiconductor material critical for India’s future in 5G/6G, defense, electric ...

Chhattisgarh Chief Minister Vishnu Deo Sai on Thursday laid the foundation stone for India's first Gallium Nitride ...

Get Instant Summarized Text (Gist) Wafer-scale hexagonal boron nitride (hBN) with an AA-stacking configuration has been synthesized using metal-organic chemical vapor deposition (MOCVD) on gallium ...