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Abstract: The detailed temperature field distribution of high-power Insulated Gate Bipolar Transistor (IGBT) modules is important information for the reliability analysis and thermal design of power ...
Copyright © 2013 Khidirov Irisali. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use ...
Faculty of Science and Engineering, Waseda University, 2-2 Wakamatsu-cho, Shinjuku-ku, Tokyo 162-8480, Japan ...
Abstract: Parallel configurations of power chips within a multichip IGBT power module (M-IGBT-PM) are employed to meet the required current and power ratings. When the internal chips of an M-IGBT-PM ...