A world-first N-polar GaN wafer created by Chinese scientists is set to be a game changer for the semiconductor industry.

To produce high-quality GaN optoelectronic devices, manufacturers must minimize mechanical and electrical heterogeneity caused by strain and crystal defects. Therefore, non-destructive analytical ...

Researchers from Pohang University of Science and Technology (POSTECH) and the University of Montpellier have successfully ...

How GaN devices can handle kilowatt power conversion ... Electrons from the n-type region move through the crystal lattice and many electrons remain close to the heterojunction (the heterojunction ...

Pohang University and University of Montpellier researchers synthesize AA-stacked hBN, revealing novel stacking control ...

a crystal structure previously considered unattainable. This achievement, accomplished via metal-organic chemical vapor deposition (MOCVD) on a gallium nitride (GaN) substrate, introduces a novel ...

Surrounded by dramatic cliffs and forest trails, this remote natural pool is captivating outdoor lovers from across Vietnam.

Researchers from China's Zhejiang University, in collaboration with the University of Cambridge, have created the world’s ...