The new bismuth-based transistor could revolutionize chip design, offering higher efficiency while bypassing silicon’s limitations.

The researchers, led by physical chemistry professor Peng Hailin, said their self-engineered 2D transistor could operate 40 per cent faster than Intel and TSMC’s cutting-edge 3-nanometre silicon ...

Some also include current sensing. The paralleled silicon IGBT and GaN hemt efficiency argument goes like this: The GaN transistor has low conduction and low switching losses at low traction loads, ...

March 11 marks the annual celebration of all things 311, and the band is marking the occasion this year with a whole bunch of news. First, the “Down” rockers have announced a vinyl reissue of their ...