Jiufengshan Laboratory (JFS) announced two major breakthroughs in GaN technology: the world's first 8-inch silicon-based ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

Nexperia has expanded its GaN FET portfolio with 12 new E-mode devices, available in both low- and high-voltage options.

Generative AI tools are constantly improving — making it increasingly difficult for us to detect which images are ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

On Wednesday, March 19th, Gan Academy invites the Crown Heights community and friends around the world to invest in the ...

UGreen has launched an exciting new collection of charging accessories inspired by Genshin Impact, featuring designs based on ...

S'pore has opportunities in an increasingly trade hostile world: Ministers, experts at CNBC Converge Live Read more at straitstimes.com.

Gan Chayolei Hamelech, a premier boys' preschool dedicated to providing a wholesome and Chassidish Chinuch, is excited to announce that it is now accepting vouchers for the first time ever. This ...

EPC launches the EPC2367 100-V GaN FET with an ultra-low on-resistance and higher efficiency for AI servers, robotics, and automotive power.

With the transition from silicon transistors to gallium nitride (GaN) transistors, chargers have become smaller, more efficient, safer, and run cooler. This advancement in technology has ...